Title

A Novel Electrostatic Discharge (Esd) Protection Circuit In D-Mode Phemt Technology

Keywords

D-Mode; ESD; HBM; HEMT

Abstract

Electrostatic discharge (ESD) protection structures in the D-Mode GaAs HEMT technology are commonly constructed using either stacked Schottky diode or Single-Gate clamp. This paper develops an improved ESD protection clamp based on a novel multi-gate pHEMT in D-Mode technology. With similar layout area, the proposed ESD protection clamp can carry much higher current than the conventional single-gate pHEMT clamp under the human body model (HBM) stress. © 2012 IEEE.

Publication Date

12-20-2012

Publication Title

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/CSICS.2012.6340079

Socpus ID

84871146967 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84871146967

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