Title
Experimental Verification Of Rf Stress Effect On Cascode Class-E Pa Performance And Reliability
Keywords
Cascode class E; gate oxide breakdown; output power; power amplifier (PA); power efficiency; reliability
Abstract
A cascode class-E power amplifier (PA) operating at 5.2 GHz has been designed using Advanced Design System simulation. RF circuit performances such as output power and power-added efficiency before and after RF stress have been experimentally investigated. The measured output power, power-added efficiency, and linearity after high-input-power RF stress at elevated supply voltage show significant circuit degradations. The impact of hot-carrier injection and gate oxide soft breakdown on cascode class-E PA reliability is discussed. © 2012 IEEE.
Publication Date
6-14-2012
Publication Title
IEEE Transactions on Device and Materials Reliability
Volume
12
Issue
2
Number of Pages
369-375
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/TDMR.2011.2179548
Copyright Status
Unknown
Socpus ID
84862013926 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84862013926
STARS Citation
Yuan, Jiann Shiun; Yen, Hsuan Der; Chen, Shuyu; Wang, Ruey Lue; and Huang, Guo Wei, "Experimental Verification Of Rf Stress Effect On Cascode Class-E Pa Performance And Reliability" (2012). Scopus Export 2010-2014. 4230.
https://stars.library.ucf.edu/scopus2010/4230