Title

A Simulation Study Of Colpitts Oscillator Reliability And Variability

Keywords

Body bias; Colpitts oscillator; Monte Carlo (MC) simulation; phase noise; process variability

Abstract

Nanoscale CMOS reliability and process variation effect on the LC Colpitts oscillator has been examined. Mixed-mode device and circuit simulation is used to investigate the physical insight of impact ionization to the Colpitts oscillator. An analytical equation of phase noise as a function of offset frequency, transistor parameters, and body bias has been derived. The analytical predictions are in good agreement with ADS simulation results. An adaptive body bias to minimize process variation effect on the Colpitts oscillator has also been proposed. The adaptive body bias technique effectively reduces the hot electron effect and process variability on the Colpitts oscillator performance, as supported by Monte Carlo simulation results. © 2001-2011 IEEE.

Publication Date

9-14-2012

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

12

Issue

3

Number of Pages

576-581

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2012.2195181

Socpus ID

84866026878 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84866026878

This document is currently not available here.

Share

COinS