Title

Manganese Diffusion In Monocrystalline Germanium

Keywords

Diffusion; Ge; Mn; Spintronics

Abstract

The diffusion of a half monolayer of Mn deposited by molecular beam epitaxy on a Ge(0 0 1) substrate was studied via secondary ion mass spectrometry. Mn diffused in Ge under extrinsic conditions, exhibiting a solubility of 0.7-0.9%. All the Mn atoms were activated, occupying Ge substitutional sites and exhibiting a negative charge, in agreement with semiconductor doping theory. The diffusion mechanism being vacancy (V)-mediated, the formation of Mn-V pairs is suggested. Mn surface desorption occurred for temperatures >600 °C. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Publication Date

8-1-2012

Publication Title

Scripta Materialia

Volume

67

Issue

3

Number of Pages

269-272

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.scriptamat.2012.04.038

Socpus ID

84862286405 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84862286405

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