Title

Nanometric-Size Effect Upon Diffusion And Reaction In Semiconductors: Experimental And Theoretical Investigations

Keywords

Diffusion; Nanometric scale; Reactive diffusion; Silicon; Simulation; Size effect

Abstract

The use of nanometric size materials as embedded clusters, nanometric films, nanocrystalline layers and nanostructures is steadily increasing in industrial processes aiming to produce materials and devices. This is especially true in today Si-based microelectronics with transistors made of a multitude of different thin film materials (B-, As-, and P-doped Si, NiSi(Pt), poly-Si, W, TiOx, LaO, SiO2, Al, HfO2⋯), and exhibiting a characteristic lateral size of 32-22 nm. Size reduction leads to an increasing role of surfaces and interfaces, as well as stress and nano-scale effects upon important phenomena driving fabrication processes, such as atomic diffusion, phase nucleation, phase growth, and coarsening. Consequently, nanotechnology related to Material Science requires an investigation at the nanometric (or atomic) scale of elementary physical phenomena that are well-known at the microscopic scale. This paper is focused on nano-size effects upon diffusion in Si and Si reactive diffusion. We present recent results showing that the kinetic of lattice diffusion is enhanced in semiconductor nanometric (nano-) grains, while grain boundary (GB) diffusion is not changed in nano-GBs. It is also shown that diffusion in triple-junction (TJ) is several orders of magnitude faster than GB diffusion, and that its effect cannot be neglected in nanocrystalline (nc) layers made of 40 nm-wide grains. Experimental results concerning Si sub-nanometric film reaction on Ni(111) substrate are also presented and compared to theoretical results giving new prospects concerning nano-size effects on reactive diffusion at the atomic scale. © (2012) Trans Tech Publications.

Publication Date

1-1-2012

Publication Title

Defect and Diffusion Forum

Volume

323-325

Number of Pages

433-438

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.4028/www.scientific.net/DDF.323-325.433

Socpus ID

84860796376 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84860796376

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