Title
Nanometric-Size Effect Upon Diffusion And Reaction In Semiconductors: Experimental And Theoretical Investigations
Keywords
Diffusion; Nanometric scale; Reactive diffusion; Silicon; Simulation; Size effect
Abstract
The use of nanometric size materials as embedded clusters, nanometric films, nanocrystalline layers and nanostructures is steadily increasing in industrial processes aiming to produce materials and devices. This is especially true in today Si-based microelectronics with transistors made of a multitude of different thin film materials (B-, As-, and P-doped Si, NiSi(Pt), poly-Si, W, TiOx, LaO, SiO2, Al, HfO2⋯), and exhibiting a characteristic lateral size of 32-22 nm. Size reduction leads to an increasing role of surfaces and interfaces, as well as stress and nano-scale effects upon important phenomena driving fabrication processes, such as atomic diffusion, phase nucleation, phase growth, and coarsening. Consequently, nanotechnology related to Material Science requires an investigation at the nanometric (or atomic) scale of elementary physical phenomena that are well-known at the microscopic scale. This paper is focused on nano-size effects upon diffusion in Si and Si reactive diffusion. We present recent results showing that the kinetic of lattice diffusion is enhanced in semiconductor nanometric (nano-) grains, while grain boundary (GB) diffusion is not changed in nano-GBs. It is also shown that diffusion in triple-junction (TJ) is several orders of magnitude faster than GB diffusion, and that its effect cannot be neglected in nanocrystalline (nc) layers made of 40 nm-wide grains. Experimental results concerning Si sub-nanometric film reaction on Ni(111) substrate are also presented and compared to theoretical results giving new prospects concerning nano-size effects on reactive diffusion at the atomic scale. © (2012) Trans Tech Publications.
Publication Date
1-1-2012
Publication Title
Defect and Diffusion Forum
Volume
323-325
Number of Pages
433-438
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.4028/www.scientific.net/DDF.323-325.433
Copyright Status
Unknown
Socpus ID
84860796376 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84860796376
STARS Citation
Portavoce, A.; Girardeaux, C.; Tréglia, G.; Bernardini, J.; and Mangelinck, D., "Nanometric-Size Effect Upon Diffusion And Reaction In Semiconductors: Experimental And Theoretical Investigations" (2012). Scopus Export 2010-2014. 5427.
https://stars.library.ucf.edu/scopus2010/5427