Title

Temperature Dependent Charge Transport In Poly(3-Hexylthiophene)-Block Polystyrene Copolymer Field-Effect Transistor

Keywords

Co-polymer; Hopping; Low temperature transport; Organic transistor; P3HT

Abstract

Electronic transport of regioregular poly(3-hexylthiophene)-block-poly styrene (rr-P3HT-b-PS) copolymer in field effect transistor (FET) geometry with different surface treatment and different temperature is investigated. The devices show p type behavior with a maximum saturation mobility of 6 × 10 -3 cm 2/V s and current on/off ratio of 2.6 × 10 4 in an OTS treated sample at room temperature, which is lower compared to the controlled P3HT sample of same molecular weight fabricated with the same surface treatment. The mobility measured at different temperatures (300-150 K) show thermally activated hopping type transport mechanism with gate bias dependent activation energy of 100-270 meV which is higher compared to the reported value of pristine P3HT FET. The higher activation energy in hopping behavior and lower mobility in this block copolymer is caused by insulating PS segments. © 2012 Elsevier B.V. All rights reserved.

Publication Date

10-1-2012

Publication Title

Synthetic Metals

Volume

162

Issue

17-18

Number of Pages

1531-1536

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.synthmet.2012.07.022

Socpus ID

84865057592 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84865057592

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