Title

Low-Temperature (210 °C) Deposition Of Crystalline Germanium Via In Situ Disproportionation Of Gei 2

Keywords

A. Halides; A. Inorganic compound; A. Semiconductors; B. Vapor deposition; C. X-ray diffraction

Abstract

A new approach is reported for depositing crystalline germanium films. The deposition occurs at low temperatures (210-260 °C) via in situ disproportionation of GeI 2 and is thereby useful for depositing Ge onto a wide range of surfaces. Deposition onto glass and polymer substrates is demonstrated. The rate of deposition onto glass is found to be 25 ng min -1. New synthetic routes to GeI 2, GeI 4, and Cu 3Ge are also reported. These are valuable precursors for the synthesis of germanium nanostructures and organo-germanium compounds. © 2012 Elsevier Ltd. All rights reserved.

Publication Date

11-1-2012

Publication Title

Materials Research Bulletin

Volume

47

Issue

11

Number of Pages

3484-3488

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.materresbull.2012.06.072

Socpus ID

84866730156 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84866730156

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