Title
Diffusion And Redistribution Of Boron In Nickel Silicides
Keywords
Boron; Diffusion; Nickel silicides; Redistribution; Solubility
Abstract
The diffusion and solubility of B implanted in δ-Ni2Si and NiSi layers is studied by SIMS. It is observed that both diffusion and solubility are higher in δ-Ni2Si than NiSi. The redistribution of B during Ni silicidation is also studied. The SIMS profiles show the presence of concentration step in the middle of the final NiSi layer. This profile shape is explained in light of the results obtained in preformed silicides. The proposed model is supported by redistribution simulations that can reproduce the main features of the profile. © (2012) Trans Tech Publications.
Publication Date
1-1-2012
Publication Title
Defect and Diffusion Forum
Volume
323-325
Number of Pages
415-420
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.4028/www.scientific.net/DDF.323-325.415
Copyright Status
Unknown
Socpus ID
84860828809 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84860828809
STARS Citation
Blum, Ivan; Portavoce, Alain; Chow, Lee; Hoummada, Khalid; and Mangelinck, Dominique, "Diffusion And Redistribution Of Boron In Nickel Silicides" (2012). Scopus Export 2010-2014. 5426.
https://stars.library.ucf.edu/scopus2010/5426