Title

Laser-Doped Sic As Wireless Remote Gas Sensor Based On Semiconductor Optics

Keywords

Laser doping; Noncontact sensor; Nonintrusive sensor; Optical sensor; Refractive index

Abstract

An uncooled SiC-based electro-optic device is developed for gas sensing applications. P-type dopants Ga, Sc, P and Al are incorporated into an n-type crystalline 6H-SiC substrate by a laser doping technique for sensing CO 2, CO, NO2 and NO gases, respectively. Each dopant creates an acceptor energy level within the bandgap of the substrate so that the energy gap between this acceptor level and the valence band matches the quantum of energy emitted by the gas of interest. The photons of the gas excite electrons from the valence band to the acceptor level, which alters the electron density in these two states. Consequently, the refractive index of the substrate changes, which, in turn, modifies the reflectivity of the substrate. This change in reflectivity represents the optical signal of the sensor, which is probed remotely with a laser such as a helium-neon laser. Although the midwave infrared (3-5 μm) band is studied in this paper, the approach is applicable to other spectral bands. © (2012) Trans Tech Publications.

Publication Date

1-1-2012

Publication Title

Materials Science Forum

Volume

717-720

Number of Pages

1195-1198

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1195

Socpus ID

84861364515 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84861364515

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