Title

Uncooled Silicon Carbide Sensor Producing Optical Signal

Abstract

A novel approach will be discussed to design and fabricate sensors for a wide variety of wavelengths by selecting appropriate acceptor levels in a semiconductor material. An n-type 4H-SiC substrate has been doped with gallium using a laser doping method for sensing the MWIR wavelength of 4.21 mm. The incident MWIR photons change the electron densities in the valence band and the acceptor energy levels, modifying the reflectivity of the sensor. This change in the reflectivity is determined with a He-Ne laser as an optical signal and the sensor can be operated at room temperature. The effect of the photon collection optics on the sensor response has been studied. Also the dopant concentration has been found to affect the optical signal. © 2012 SPIE.

Publication Date

1-1-2012

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

8359

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.1000118

Socpus ID

84870223882 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84870223882

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