Title

Novel Drain-Less Multi-Gate Phemt For Electrostatic Discharge (Esd) Protection In Gaas Technology

Keywords

ESD; GaAs; HEM; Human Body Model

Abstract

Electrostatic discharge (ESD) protection structures in GaAs HEMT technology are commonly constructed using either stacked Schottky diode or Single-Gate clamp. Dual-gate pHEMT clamp was also recently reported for its better ESD robustness performance. This paper further develops an improved ESD protection clamp based on a novel drainless, multi-gate pHEMT in 0.5um GaAs pHEMT technology. With similar layout area, the proposed ESD protection clamp can carry much higher current handling ability (5.2-A 'It2', roughly 7.8-kV HBM ESD level) than both the conventional single-gate pHEMT clamp and recently reported dual-gate pHEMT clamp under the human body model (HBM) stress. © 2013 IEEE.

Publication Date

8-7-2013

Publication Title

IEEE International Reliability Physics Symposium Proceedings

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/IRPS.2013.6532073

Socpus ID

84881001939 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84881001939

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