Title

High-Robustness And Low-Capacitance Silicon-Controlled Rectifier For High-Speed I/O Esd Protection

Keywords

Electrostatic discharge (ESD); parasitic capacitance; silicon-controlled rectifier (SCR)

Abstract

A high-robustness and low-capacitance clamp for on-chip electrostatic discharge (ESD) protection is developed. The low capacitance is obtained by mitigating the capacitance associated with the lightly doped n-well/p-well junction. In addition to minimizing the capacitance, the high ESD robustness is achieved by optimizing independently within the same structure a silicon-controlled rectifier and a diode for the forward and reverse conduction processes, respectively. The new clamp with an area of 50 ×10μm 2 is able to handle an ESD current in excess of 1.5 A, whereas the capacitance at zero bias is kept at 94 fF. © 1980-2012 IEEE.

Publication Date

1-18-2013

Publication Title

IEEE Electron Device Letters

Volume

34

Issue

2

Number of Pages

178-180

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2012.2233708

Socpus ID

84873056836 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84873056836

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