Title
Study Of Graphene Field-Effect Transistors Under Electrostatic Discharge Stresses
Abstract
Graphene field-effect transistors (GFETs) are characterised for the first time under electrostatic discharge stresses. The GFETs are measured from the transmission line pulsing (TLP) tester and very fast TLP (VFTLP) tester. The turn-on behaviour influenced by back gate voltage is investigated. The I-V curve of the GFETs shows no characteristic of snapback from TLP or VFTLP measurement. © The Institution of Engineering and Technology 2013.
Publication Date
8-15-2013
Publication Title
Electronics Letters
Volume
49
Issue
17
Number of Pages
1086-1087
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1049/el.2013.1865
Copyright Status
Unknown
Socpus ID
84882334784 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84882334784
STARS Citation
Dong, Shurong; Zhong, Lei; Zeng, Jie; Guo, Wei; and Li, Hongwei, "Study Of Graphene Field-Effect Transistors Under Electrostatic Discharge Stresses" (2013). Scopus Export 2010-2014. 6102.
https://stars.library.ucf.edu/scopus2010/6102