Title

Low-Capacitance Scr Structure For Rf I/O Application

Keywords

Electrostatic discharge (ESD); parasitic capacitance; radio frequency (RF)

Abstract

Electrostatic discharge (ESD) devices based on diodes and silicon controlled rectifier for RF I/O protection are evaluated on both ESD and RF performance. Varying from the architecture, layout design and metal interconnection, candidate devices show different parasitic capacitance, ESD efficiency, and turn on speed. Potential solution for further RF I/O application is verified. © 1964-2012 IEEE.

Publication Date

1-1-2013

Publication Title

IEEE Transactions on Electromagnetic Compatibility

Volume

55

Issue

2

Number of Pages

241-247

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TEMC.2012.2216271

Socpus ID

84876284962 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84876284962

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