Title

Optimization Of Photoluminescence Lifetime For Zno Films Grown On Zno Substrates At Low Temperature

Keywords

Defects; Epitaxial growth; Homoepitaxy; Photoluminescence lifetime; Structural; ZnO

Abstract

ZnO films were grown on Zn-polar ZnO substrates with 0.5° miscut toward the [1EQ O(1,̄)00] direction by plasma-assisted molecular beam epitaxy (PAMBE). An atomically flat surface with one or two monolayer step height along the [0001] direction was achieved at low growth temperature. Wet etching of the substrates and ozone exposure reduced defects and improved photoluminescence (PL) lifetime by a factor of two. A 20 min interval between oxygen plasma ignition and growth was found necessary for excellent crystallinity and yielded high PL lifetimes of 0.179 ns. By decreasing the growth temperature in the low temperature range, the growth rate was increased from 0.02 μm/h to 0.246 μm/h, and correspondingly PL lifetime was improved by an order of magnitude, from 0.018 ns to 0.3 ns. © 2013 Elsevier B.V.

Publication Date

2-18-2013

Publication Title

Materials Letters

Volume

97

Number of Pages

11-14

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.matlet.2013.01.090

Socpus ID

84873682210 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84873682210

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