Title

Impact Of Oxygen Source Parameters On Homoepitaxial Zno Films Grown At Low-Temperature On Zn-Polar Substrates

Keywords

Atomic force microscopy; Homoepitaxy; Molecular beam epitaxy; Oxygen plasma; ZnO

Abstract

ZnO thin films were epitaxially grown on Zn-polar (0001) ZnO substrates by plasma-assisted molecular beam epitaxy at a low temperature of 610 °C. The influence of Zn/O ratio on the epitaxial growth of ZnO was investigated. By optimizing the Zn/O ratio, a surface root mean square roughness of 0.277 nm with one or two monolayer height steps was achieved at a low growth temperature by growing on ZnO substrates with 0.5° miscut angle toward the [1 100] axis. Electrostatic ion trapping of the oxygen plasma was found crucial to deflect etching oxygen species at an oxygen flow rate of two standard cubic centimeters per minute, resulting in fewer surface defects and a longer photoluminescence (PL) lifetime of 217 ps. The impact of oxygen source gas purity was studied by high resolution X-ray diffraction and time-resolved photoluminescence (TRPL) measurements of resultant epilayers and higher gas purity was found necessary to reduce non-radiative centers. © 2012 Elsevier B.V. All rights reserved.

Publication Date

3-5-2013

Publication Title

Journal of Alloys and Compounds

Volume

552

Number of Pages

127-130

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.jallcom.2012.10.034

Socpus ID

84869873866 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84869873866

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