Title
Power Amplifier Resilient Design For Process, Voltage, And Temperature Variations
Abstract
This paper presents RF power amplifier adaptive body bias compensation technique for output power and power-added efficiency resilient to process, supply voltage, and temperature (PVT) variations. The adaptive body biasing scheme uses a current source for PVT sensing to provide resilience through the threshold voltage adjustment to maintain power amplifier performance over a wide range of variability. Analytical equations are derived for physical insight. ADS simulation results show that the resilient body biasing design improves the robustness of the power amplifier in output power and power-added efficiency over process, supply voltage, and temperature variations. © 2013 Elsevier Ltd. All rights reserved.
Publication Date
3-27-2013
Publication Title
Microelectronics Reliability
Volume
53
Issue
6
Number of Pages
856-860
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.microrel.2013.02.003
Copyright Status
Unknown
Socpus ID
84879846261 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84879846261
STARS Citation
Yuan, J. S. and Kritchanchai, E., "Power Amplifier Resilient Design For Process, Voltage, And Temperature Variations" (2013). Scopus Export 2010-2014. 6786.
https://stars.library.ucf.edu/scopus2010/6786