Title

Reliability Analysis Of Phemt Power Amplifier With An On-Chip Linearizer

Abstract

The hot carrier reliability and self-heating of the Al0.3Ga 0.7As/In0.25Ga0.75As pHEMT has been examined using mixed-mode simulation. A two-stage power amplifier using 0.15 μm InGaAs pHEMT technology with an on-chip linearizer has been designed and fabricated for the evaluation of electrical stress on RF circuit performances. The power amplifier was subjected to high RF input power while doubling the supply voltage for accelerated aging. The experimental data of the amplifier's output power, power-added efficiency, and linearity show little changes after 10 h of continuous RF stress. © 2013 Elsevier Ltd. All rights reserved.

Publication Date

4-4-2013

Publication Title

Microelectronics Reliability

Volume

53

Issue

6

Number of Pages

878-884

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2013.02.010

Socpus ID

84879844085 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84879844085

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