Title

Millimeter And Terahertz Detectors Based On Plasmon Excitation In Ingaas/Inp Hemt Devices

Keywords

2DEG; detector; Graphene; HEMT; Plasmon; terahertz

Abstract

Recent progress in the investigation of millimeter-wave and THz detectors based on plasmon excitation in the twodimensional electron gas (2DEG) of a high electron mobility transistor (HEMT) is reported. A tunable resonant polarized photoresponse to mm-wave radiation in the frequency range of 40 to 110 GHz is demonstrated for a gratinggated InGaAs/InP based device. The gate consisted of a metal grating with period of 9 μm specifically designed for excitation of sub-THz plasmons. The resonant excitation of plasmons, which shifts with gate-bias, changes the channel conductance. This resonant change in channel conductance enables potential applications in chip-scale frequency-agile detectors, which can be scaled to mid-THz frequencies. © 2013 Copyright SPIE.

Publication Date

6-10-2013

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

8624

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.2006137

Socpus ID

84878601503 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84878601503

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