Title

Novel Esd Protection Solution For Single-Ended Mixer In Gaas Phemt Technology

Abstract

This paper develops an improved electrostatic discharge (ESD) protection solution built with a novel dual-gate, depletion-mode pHEMT device in the GaAs technology. The successful implementation of this ESD clamp in a single ended passive RF mixer with a Human Body Model (HBM) ESD protection level of over 1.8 kV is also demonstrated. The ESD protected mixer is also shown to maintain its RF integrity with only a minimal degradation in the conversion loss and noise figure. © 2013 Elsevier Ltd. All rights reserved.

Publication Date

7-1-2013

Publication Title

Microelectronics Reliability

Volume

53

Issue

7

Number of Pages

952-955

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2013.03.013

Socpus ID

84878496767 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84878496767

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