Title

Defect And Microstructural Evolution In Thermally Cycled Cu Through-Silicon Vias

Keywords

Copper; Cycling; Microstructure; Thermal; Through-silicon via; TSV; Void

Abstract

In this study, the effect of thermal cycling on defect generation, microstructure, and RF signal integrity of blind Cu through-silicon vias (TSVs) were investigated. Three different thermal cycling profiles were used; each differentiated by their peak cycling temperature (100 °C, 150 °C, 200 °C) and the time needed to complete one cycle (cycle time). The study was performed on two Cu TSV wafer sample types; one containing large processing-induced voids (voided sample), the other without (non-voided sample). It was found that the RF signal return loss |S11| of the Cu TSVs increased upon thermal cycling for both the voided and the non-voided sample types. This was attributed to the increase in the void area due to the formation of new voids, rather than the growth of preexisting voids. On the other hand, the grain orientation and grain sizes of the Cu TSVs were found to be unaffected by all studied thermal cycling conditions and sample types.

Publication Date

11-1-2014

Publication Title

Microelectronics Reliability

Volume

54

Issue

11

Number of Pages

2586-2593

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2014.05.007

Socpus ID

84911422804 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84911422804

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