Title

Temperature Dependence Of Defect Evolution And Distribution In Thermally Cycled Cu-Tsvs

Abstract

Copper (Cu) through-silicon vias (TSV) were thermally cycled using three cycling profiles, which were differentiated by peak cycling temperature. Signal loss in the TSVs escalated with peak cycling temperature for some samples due to the resulting increased void content. This void area increase was attributed to the formation of new voids and not growth of pre-existing voids. The Cu microstructure in the TSVs appeared to be unaffected by the cycling. The Cu was not preferentially oriented and contained a substantial amount of twins.

Publication Date

1-1-2014

Publication Title

ECS Transactions

Volume

61

Issue

2

Number of Pages

177-184

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/06102.0177ecst

Socpus ID

84925154081 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84925154081

This document is currently not available here.

Share

COinS