Title

Key Factors Affecting Trigger Voltage Of Scrs For Esd Protection

Abstract

A lateral silicon-controlled rectifier (SCR), a modified vertical SCR and a modified lateral SCR with the same device width are fabricated in a 0.25-μm Bipolar-CMOS-DMOS high-voltage process. Key factors affecting the trigger voltage of SCRs are investigated by simulation and transmission line pulse tests. The simulation results show that the trigger voltage depends on the doping concentration, the space charge width and the vertical depth of the breakdown junction. The experimental results indicate that the trigger voltage can be decreased from 40 V to 15 V when the space charge width and the vertical depth of breakdown junction decrease appropriately.

Publication Date

1-23-2014

Publication Title

Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ICSICT.2014.7021290

Socpus ID

84946690002 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84946690002

This document is currently not available here.

Share

COinS