Title

Voltage Stress Effect On Class Ab Power Amplifier And Mixed-Signal Sample-Hold Circuit

Abstract

The effects of gate and drain voltage stress and breakdown location on the class AB power amplifier and mixed-signal sample-hold circuit have been studied. The soft breakdown has minor effect on the performance of the power amplifier and sample-hold circuit, while the hard breakdown at the drain side reduces the power efficiency of the class AB power amplifier and degrades the signal to noise ratio of the sample-hold circuit significantly. Also, hot electron effect reduces the linearity of the class AB power amplifier. © 2010 Elsevier Ltd. All rights reserved.

Publication Date

6-1-2010

Publication Title

Microelectronics Reliability

Volume

50

Issue

6

Number of Pages

801-806

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2010.02.009

Socpus ID

77953230941 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77953230941

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