Title
Impact Of Strain On Hot Electron Reliability Of Dual-Band Power Amplifier And Integrated Lna-Mixer Rf Performances
Keywords
Class-E power amplifier; Hot electron stress; LNA-mixer; Noise figure; Power efficiency; S-parameters
Abstract
Channel hot-electron-induced degradation on strained MOSFETs is examined experimentally. BSIM stressed model parameters are extracted from measurement and used in Cadence SpectreRF simulation to study the impact of channel hot electron stress on dual-band class-E power amplifier and integrated low-noise amplifier-mixer RF performances. Channel hot electron effect decreases power efficiency of dual-band class-E power amplifier and increases the noise figure of low-noise amplifier-mixer combined circuit. © 2010 Elsevier Ltd. All rights reserved.
Publication Date
6-1-2010
Publication Title
Microelectronics Reliability
Volume
50
Issue
6
Number of Pages
807-812
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.microrel.2010.02.019
Copyright Status
Unknown
Socpus ID
77953127207 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/77953127207
STARS Citation
Yuan, J. S.; Ma, J.; Yeh, W. K.; and Hsu, C. W., "Impact Of Strain On Hot Electron Reliability Of Dual-Band Power Amplifier And Integrated Lna-Mixer Rf Performances" (2010). Scopus Export 2010-2014. 894.
https://stars.library.ucf.edu/scopus2010/894