Title

Parameter Extraction In Polysilicon Nanowire Mosfets Using New Double Integration-Based Procedure

Keywords

Double integration; MOSFETs; Nanowire; Noise reduction; Parameter extraction; Polysilicon; Subthreshold Slope; Successive integration; Threshold voltage

Abstract

A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. The threshold voltage and Subthreshold Slope factor are extracted from noisy measured current-voltage characteristics. It is shown that the present method offers advantages over previous extraction procedures regarding data noise reduction. In addition, the normalized mutual integral difference operator method is scrutinized and an improvement of the method is presented. © 2010 Elsevier Ltd. All rights reserved.

Publication Date

6-1-2010

Publication Title

Solid-State Electronics

Volume

54

Issue

6

Number of Pages

635-641

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.sse.2010.01.011

Socpus ID

77950296269 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77950296269

This document is currently not available here.

Share

COinS