Title

High Response Solar-Blind Mgzno Photodetectors Grown By Molecular Beam Epitaxy

Keywords

Detectors; MgZnO; Oxides; Solar-blind; Ultra-violet; ZnO

Abstract

High quality w-MgxZn1-xO thin films were grown epitaxially on c-plane sapphire substrates by plasma-assisted Molecular Beam Epitaxy. ZnO thin films with high crystalline quality, low defect and dislocation densities, and subnanometer surface roughness were achieved by applying a low temperature nucleation layer. By tuning Mg/Zn flux ratio, wurtzite MgxZn1-xO thin films with Mg composition as high as x=0.46 were obtained without phase segregation. Metal- Semiconductor-Metal (MSM) photoconductive and Schottky barrier devices with interdigitated electrode geometry and active surface area of 1 mm2 were fabricated and characterized. Resultant devices showed ∼100 A/W peak responsivity at wavelength of ∼260nm. We also report on cubic rock salt c-MgxZn1-xO thin films, following a non-traditional approach on MgO substrates, to demonstrate solar-blind photoresponse in MSM photodetectors, realizing a peak responsivity of 460 A/W (@ 250 nm) and 12.6 mA/W (@ 240nm) for mixed phase and single crystal films, respectively. A specific focus of the work is on identifying the impact of various growth parameters on the performance of the c- MgZnO detectors. © 2014 SPIE.

Publication Date

1-1-2014

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

8987

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.2045555

Socpus ID

84901755793 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84901755793

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