Title

A Novel Dtscr With A Variation Lateral Base Doping Structure To Improve Turn-On Speed For Esd Protection

Keywords

built-in electric field; double triggered silicon controlled rectifier (DTSCR); electrostatic discharge (ESD); turn-on speed; variation lateral base doping (VLBD)

Abstract

The turn-on speed of electrostatic discharge (ESD) protection devices is very important for the protection of the ultrathin gate oxide. A double trigger silicon controlled rectifier device (DTSCR) can be used effectively for ESD protection because it can turn on relatively quickly. The turn-on process of the DTSCR is first studied, and a formula for calculating the turn-on time of the DTSCR is derived. It is found that the turn-on time of the DTSCR is determined mainly by the base transit time of the parasitic p-n-p and n-p-n transistors. Using the variation lateral base doping (VLBD) structure can reduce the base transit time, and a novel DTSCR device with a VLBD structure (VLBD-DTSCR) is proposed for ESD protection applications. The static-state and turn-on characteristics of the VLBD-DTSCR device are simulated. The simulation results show that the VLBD structure can introduce a built-in electric field in the base region of the parasitic n-p-n and p-n-p bipolar transistors to accelerate the transport of free-carriers through the base region. In the same process and layout area, the turn-on time of the VLBD-DTSCR device is at least 27% less than that of the DTSCR device with the traditional uniform base doping under the same value of the trigger current. © 2014 Chinese Institute of Electronics.

Publication Date

1-1-2014

Publication Title

Journal of Semiconductors

Volume

35

Issue

6

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1088/1674-4926/35/6/064010

Socpus ID

84902687628 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84902687628

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