Title
Power Amplifier Resilient Design For Process And Temperature Variations Using An On-Chip Pll Sensing Signal
Abstract
This paper presents RF power amplifier adaptive body bias compensation technique for output power and power-added efficiency resilience to process and temperature variations. The adaptive body biasing scheme uses a phase-lock loop for variability sensing to provide resilience through the threshold voltage adjustment to maintain power amplifier performance over a wide range of variability. Analytical equations are derived for physical insight. Circuit simulation results show that the adaptive body biasing design improves the robustness of the power amplifier in output power and power-added efficiency over process and temperature variations. © 2013 Elsevier Ltd. All rights reserved.
Publication Date
1-1-2014
Publication Title
Microelectronics Reliability
Volume
54
Issue
1
Number of Pages
167-171
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.microrel.2013.09.006
Copyright Status
Unknown
Socpus ID
84891653105 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84891653105
STARS Citation
Yuan, J. S. and Chen, S., "Power Amplifier Resilient Design For Process And Temperature Variations Using An On-Chip Pll Sensing Signal" (2014). Scopus Export 2010-2014. 9687.
https://stars.library.ucf.edu/scopus2010/9687