Title

Hot Carrier Injection Stress Effect On A 65 Nm Lna At 70 Ghz

Keywords

Hot electron; low noise amplifier; noise figure

Abstract

The hot carrier injection stress effect on a 65 nm low-noise amplifier at the 70 GHz range of operation has been studied. The experimental data show that the minimum noise figure increases (∼2 dB) and the maximum small-signal power gain decreases (∼3 dB) after 10 h of HCI overstress due to transconductance degradation as evidenced by 65 nm individual transistor measurement.

Publication Date

9-1-2014

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

14

Issue

3

Number of Pages

931-934

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2014.2328496

Socpus ID

84930934710 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84930934710

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