Metal Induced Recombination Parameter Extraction Using High Resolution Photoluminescence Imaging For Silicon Solar Cells

Keywords

metal; photoluminescence; recombination; silicon wafer solar cells

Abstract

Metal induced recombination (i.e., contact recombination) is a significant loss mechanism for homojunction crystalline silicon solar cells. In this work, a method is proposed to extract the metal induced recombination parameters using high- resolution photoluminescence PL imaging. By calculating the voltage distribution profile between fingers, the total current flow from the semiconductor to the finger, per area, can be obtained. The total recombination current at the semiconductor area and the metal contact area are then calculated and used to calculate the reverse saturation current for each region. The metal induced reverse saturation current (j-{0m}) is then obtained. This measurement allows the extraction of j-{0m} on finished solar cells without the need to make special metal test structures. This is a big advantage over existing methods.

Publication Date

11-26-2018

Publication Title

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Number of Pages

3743-3745

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC.2018.8547945

Socpus ID

85059918174 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85059918174

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