Atmospheric Pressure Chemical Vapor Deposition Of Aluminum Oxide For Silicon Surface Passivation-Background And Materials Science

Keywords

AL2O3; Alumina; APCVD; Atmospheric pressure chemical vapor deposition; Chemical vapour deposition; Chemical vapour deposition; Chemical vapour deposition; Electrical properties of elemental semiconductors (thin films/low-dimensional structures); Electrical properties of metal-insulator-semiconductor structures; Elemental semiconductors; Elemental semiconductors; Interface composition; Interface structure; Interface structure; Metal-insulator-semiconductor structures; Passivation; Photoelectric conversion; Semiconductor-insulator boundaries; Si; Silicon; Silicon surface passivation; Solar cells; Solar cells; Solar cells and arrays; Solar cells and arrays; Solid-solid interfaces; Surface treatment (semiconductor technology); Surface treatment and degradation in semiconductor technology

Abstract

The author provides a general background on atmospheric pressure chemical vapor deposition (APCVD) of Al2O3, from its origins to more recent research, focusing on surface passivation applications for solar cells and the composition and structure of the APCVD Al2O3-Si interface. Chapter Contents: • 6.1 Background on atmospheric pressure chemical vapor deposition • 6.2 Composition and structure of the APCVD Al2O3-Si interface • References.

Publication Date

1-1-2018

Publication Title

Surface Passivation of Industrial Crystalline Silicon Solar Cells

Number of Pages

73-80

Document Type

Article; Book Chapter

Personal Identifier

scopus

DOI Link

https://doi.org/10.1049/PBPO106E_ch6

Socpus ID

85118051089 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85118051089

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