Atmospheric Pressure Chemical Vapor Deposition Of Aluminum Oxide For Silicon Surface Passivation-Background And Materials Science
Keywords
AL2O3; Alumina; APCVD; Atmospheric pressure chemical vapor deposition; Chemical vapour deposition; Chemical vapour deposition; Chemical vapour deposition; Electrical properties of elemental semiconductors (thin films/low-dimensional structures); Electrical properties of metal-insulator-semiconductor structures; Elemental semiconductors; Elemental semiconductors; Interface composition; Interface structure; Interface structure; Metal-insulator-semiconductor structures; Passivation; Photoelectric conversion; Semiconductor-insulator boundaries; Si; Silicon; Silicon surface passivation; Solar cells; Solar cells; Solar cells and arrays; Solar cells and arrays; Solid-solid interfaces; Surface treatment (semiconductor technology); Surface treatment and degradation in semiconductor technology
Abstract
The author provides a general background on atmospheric pressure chemical vapor deposition (APCVD) of Al2O3, from its origins to more recent research, focusing on surface passivation applications for solar cells and the composition and structure of the APCVD Al2O3-Si interface. Chapter Contents: • 6.1 Background on atmospheric pressure chemical vapor deposition • 6.2 Composition and structure of the APCVD Al2O3-Si interface • References.
Publication Date
1-1-2018
Publication Title
Surface Passivation of Industrial Crystalline Silicon Solar Cells
Number of Pages
73-80
Document Type
Article; Book Chapter
Personal Identifier
scopus
DOI Link
https://doi.org/10.1049/PBPO106E_ch6
Copyright Status
Unknown
Socpus ID
85118051089 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85118051089
STARS Citation
Davis, Kristopher O., "Atmospheric Pressure Chemical Vapor Deposition Of Aluminum Oxide For Silicon Surface Passivation-Background And Materials Science" (2018). Scopus Export 2015-2019. 10508.
https://stars.library.ucf.edu/scopus2015/10508