Engineered Interfaces Using Surface And Contact Passivation In Silicon Solar Cells

Abstract

Silicon solar cell passivation has evolved greatly, with recent approaches enabling interface engineering for carrier selectivity and effective suppression of recombination under contacted regions of the cell. Future advanced silicon solar cell designs will certainly adopt passivated contact approaches given the strong experimental evidence demonstrating their benefits. The ability to adjust the work function of the metal oxide interfacial tunnel layer, a critical parameter in determining the efficiency of the contact, has proven to be a valuable attractive attribute. However, widespread adoption of metal oxide passivated contact approaches will require a considerable amount of further work to understand the stability and long-term reliability of such structures. Much of the near-term work must focus on the role of oxygen vacancies in determining the work function and transport properties across the interfacial layer with additional focus on processing methods to engineer such interfaces for optimal silicon solar cell efficiency.

Publication Date

3-1-2018

Publication Title

Electrochemical Society Interface

Volume

27

Issue

1

Number of Pages

63-66

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/2.F07181if

Socpus ID

85048817288 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85048817288

This document is currently not available here.

Share

COinS