Title
Transmission Electron Microscopy Study Of Uv-Ozone Cleaned Silicon Surfaces For Application In High Efficiency Photovoltaics
Keywords
atomic layer deposition; silicon; transmission electron microscopy; UV ozone
Abstract
The focus of this work is on the characterization of passivated crystalline Si (c-Si) surfaces subjected to various cleaning sequences involving UV ozone (UVo) treatment and HF-dip. A combination of photoconductance decay (PCD) measurements and high-resolution transmission electron microscopy (HRTEM) studies were used to obtain a deeper insight into passivation mechanisms of UVo and its origin at the nano-scale.
Publication Date
6-1-2019
Publication Title
Conference Record of the IEEE Photovoltaic Specialists Conference
Number of Pages
1884-1886
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/PVSC40753.2019.8980798
Copyright Status
Unknown
Socpus ID
85081623060 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85081623060
STARS Citation
Ali, Haider; Gao, Munan; Zin, Ngwe; Bakhshi, Sara; and Schoenfeld, Winston V., "Transmission Electron Microscopy Study Of Uv-Ozone Cleaned Silicon Surfaces For Application In High Efficiency Photovoltaics" (2019). Scopus Export 2015-2019. 10637.
https://stars.library.ucf.edu/scopus2015/10637