Transmission Electron Microscopy Study Of Uv-Ozone Cleaned Silicon Surfaces For Application In High Efficiency Photovoltaics

Keywords

atomic layer deposition; silicon; transmission electron microscopy; UV ozone

Abstract

The focus of this work is on the characterization of passivated crystalline Si (c-Si) surfaces subjected to various cleaning sequences involving UV ozone (UVo) treatment and HF-dip. A combination of photoconductance decay (PCD) measurements and high-resolution transmission electron microscopy (HRTEM) studies were used to obtain a deeper insight into passivation mechanisms of UVo and its origin at the nano-scale.

Publication Date

6-1-2019

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

Number of Pages

1884-1886

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC40753.2019.8980798

Socpus ID

85081623060 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85081623060

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