In Situ Transmission Electron Microscopy Study Of Molybdenum Oxide Contacts For Silicon Solar Cells

Keywords

crystalline silicon; hole-selective; in situ TEM; molybdenum oxide

Abstract

In this study, a molybdenum oxide (MoO x ) and aluminum (Al) contact structure for crystalline silicon (c-Si) solar cells is investigated using a combination of transmission line measurements (TLM) and in-situ transmission electron microscopy (TEM). Cross-sectional high-resolution TEM (HRTEM) micrographs reveal a ≈2 nm silicon oxide (SiO x ) interlayer at c-Si/MoO x interface in the as-deposited state, indicating that formation of SiO x occurs during deposition of MoO x . Moreover, oxygen diffusion takes place from MoO x toward Al resulting in the formation of a ≈2–3 nm aluminum oxide (AlO x ) interlayer at the MoO x /Al interface. Overall, it is observed that MoO x /Al contact is relatively stable upon annealing up to 200 °C and still retains ohmic transport with sufficiently low contact resistivity.

Publication Date

4-10-2019

Publication Title

Physica Status Solidi (A) Applications and Materials Science

Volume

216

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/pssa.201800998

Socpus ID

85062529936 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85062529936

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