30-Gb/S Optical Link Combining Heterogeneously Integrated Iii-V/Si Photonics With 32-Nm Cmos Circuits

Keywords

CMOS integrated circuits; Optical receivers; Optical transmitters

Abstract

We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III-V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.

Publication Date

2-1-2015

Publication Title

Journal of Lightwave Technology

Volume

33

Issue

3

Number of Pages

657-662

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/JLT.2014.2364551

Socpus ID

84923347115 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84923347115

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