Total Ionizing Dose Sensitivity Of Function Blocks In Fram

Keywords

Co-60; Ferroelectric random access memory; Microbeam; Total ionizing dose; X-ray

Abstract

The total ionizing dose (TID) sensitivity of the function blocks, including the memory array, sense amplifier, row decoder, column decoder and I/O port, of the ferroelectric random access memory (FRAM) are investigated. An X-ray microbeam is used for the selective irradiation and detailed detection. The ferroelectric memory array is proved to have higher resistance to TID than the peripheral control circuitry, whereas the sense amplifier is the most sensitive parts in the FRAM circuitry. The failure phenomenon is studied when each function block is irradiated, and the failure mechanism is discussed based on each block's technological and circuital characteristics. In addition, the Co-60 γ ray irradiation test is also performed to offer a comparison of the spot and global irradiation.

Publication Date

5-1-2015

Publication Title

Microelectronics Reliability

Volume

55

Issue

6

Number of Pages

873-878

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2015.03.001

Socpus ID

84929029698 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84929029698

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