Reliability Characterization Of Au-In Transient Liquid Phase Bonding Through Electrical Resistivity Measurement

Keywords

Diffusion process; Electronics cooling; Semiconductor device packaging; SLID; Solid-liquid interdiffusion; TLP; Transient Liquid Phase Bonding; Wafer bonding

Abstract

Transient liquid phase (TLP) die-attach bonding is an attractive technique for high-temperature semiconductor device packaging. In this paper, the material reliability of gold-indium (Au-In) TLP bonding is investigated utilizing electrical resistivity measurement as an indicator of material diffusion. Samples were fabricated featuring a TLP reaction, representative of TLP die-attach, by depositing TLP materials on glass substrates with various Au-In compositions, but with identical barrier layers, and were then used for reliability investigation. The samples were annealed at 200 °C and then stressed with thermal cycling. Samples containing high indium content in the TLP bond are shown to have poor reliability due to material diffusion through barrier layers, whereas the samples containing sufficient gold content proved reliable through electrical resistivity measurement, energy-dispersive X-ray spectroscopy, focused ion beam, and scanning electron microscope characterization.

Publication Date

12-1-2015

Publication Title

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volume

5

Issue

12

Number of Pages

1726-1733

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TCPMT.2015.2489686

Socpus ID

84947998319 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84947998319

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