A New Methodology For Human Metal Model Characterization

Abstract

A new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits (ICs) HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing.

Publication Date

8-3-2015

Publication Title

2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015

Number of Pages

329-332

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/APEMC.2015.7175272

Socpus ID

84964054444 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84964054444

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