Title
A New Methodology For Human Metal Model Characterization
Abstract
A new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits (ICs) HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing.
Publication Date
8-3-2015
Publication Title
2015 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2015
Number of Pages
329-332
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/APEMC.2015.7175272
Copyright Status
Unknown
Socpus ID
84964054444 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84964054444
STARS Citation
Luo, Sirui; Salcedo, Javier A.; Hajjar, Jean Jacques; Zhou, Yuanzhong; and Liou, Juin J., "A New Methodology For Human Metal Model Characterization" (2015). Scopus Export 2015-2019. 1948.
https://stars.library.ucf.edu/scopus2015/1948