Temperature And Pulse Duration Effects On The Growth Of Mgzno Via Pulsed Metal Organic Chemical Vapor Deposition
Abstract
The effect of substrate temperature (TS) and pulse duration (PD) on Mg incorporation, surface quality, and photoresponse properties of MgZnO films grown via PMOCVD were studied. Films grown at TS ranging from 500 to 700 C but at identical PDs had band gaps varying from 3.38 to 3.87 eV, corresponDing to Mg content between x = 0.06 and 0.27. The film with Mg content of 0.27 was the smoothest and achieved at 630 Coptimal TS. Additionally, pulse time effect was studied by growing films at the same TS but different PDs. A film grown at PD of 12 s has incorporated >40% higher Mg than one grown in a continuous mode (PDG1), indicting the cruciallity of PMOCVD to realize high Mg film. The peak response spectra of photodetectors were also varied with TS and PD, in accordance with Mg content in the films.
Publication Date
3-1-2016
Publication Title
Japanese Journal of Applied Physics
Volume
55
Issue
3
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.7567/JJAP.55.035501
Copyright Status
Unknown
Socpus ID
84962019827 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84962019827
STARS Citation
Alema, Fikadu; Hertog, Brian; Ledyaev, Oleg; Miller, Ross; and Osinsky, Andrei, "Temperature And Pulse Duration Effects On The Growth Of Mgzno Via Pulsed Metal Organic Chemical Vapor Deposition" (2016). Scopus Export 2015-2019. 2374.
https://stars.library.ucf.edu/scopus2015/2374