High Responsivity Solar Blind Photodetector Based On High Mg Content Mgzno Film Grown Via Pulsed Metal Organic Chemical Vapor Deposition

Keywords

Cutoff wavelength; MgZnO films; Pulsed metal organic chemical vapor deposition; Responsivity; Solar blind photodetector; Temporal response

Abstract

Metal-semiconductor-metal (MSM) structured solar blind photodetectors were fabricated based on various Mg content wurtzite MgxZn1−xO epitaxial films grown via pulsed metal organic chemical vapor deposition. The response spectra of the devices showed a peak position that shifts from ∼383 nm to 276 nm for Mg content, x, between 0.0 and 0.51, covering a wide portion of the ultra-violet spectral region, extending well into the solar blind window. At 10 V bias, a large responsivity of ∼1.8 × 104 A/W was obtained at 276 nm for a device based on a high Mg content (x = 0.51) MgZnO film. To the best of our knowledge, this responsivity is the highest ever reported for a MgZnO based device and its origin is attributed to large internal gain resulting from carrier trapping at the MgZnO/Ni/Au interface. This is confirmed by the presence of an asymmetric Schottky barrier height on the two MSM contacts. Conversely, the response speed of the devices was slow with the 10%–90% rise and fall times measured to be in the millisecond range. The results reported in this work show the realization of high responsivity MgZnO based solar blind photodetectors, providing a significant step in the development of MgZnO alloy based of detector.

Publication Date

10-1-2016

Publication Title

Sensors and Actuators, A: Physical

Volume

249

Number of Pages

263-268

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.sna.2016.08.036

Socpus ID

84986005435 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84986005435

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