A Compact Drain Current Model For Heterostructure Hemts Including 2Deg Density Solution With Two Subbands

Keywords

Drain current model; Fermi level; High electron mobility transistors (HEMTs); Surface potential

Abstract

An explicit and precise model for two dimensional electron gas (2DEG) charge density and Fermi level (Ef) in heterostructure high electron mobility transistors (HEMTs) is developed. This model is from a consistent solution of Schrödinger's and Poisson's equations in the quantum well with two important energy levels. With these closed-form solutions, a unified surface potential calculation valid for all the operation regions is derived. With the help of surface potential, a single-piece drain current model is developed which is also capable of describing the current collapse effect by using a semi-empirical expression of source/drain access region resistances. Comparisons with numerical and measured data show that the proposed model gives an accurate description of Ef and drain current in all regions of operation.

Publication Date

1-1-2016

Publication Title

Solid-State Electronics

Volume

115

Number of Pages

54-59

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.sse.2015.10.005

Socpus ID

84946592827 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84946592827

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