A Compact Drain Current Model For Heterostructure Hemts Including 2Deg Density Solution With Two Subbands
Keywords
Drain current model; Fermi level; High electron mobility transistors (HEMTs); Surface potential
Abstract
An explicit and precise model for two dimensional electron gas (2DEG) charge density and Fermi level (Ef) in heterostructure high electron mobility transistors (HEMTs) is developed. This model is from a consistent solution of Schrödinger's and Poisson's equations in the quantum well with two important energy levels. With these closed-form solutions, a unified surface potential calculation valid for all the operation regions is derived. With the help of surface potential, a single-piece drain current model is developed which is also capable of describing the current collapse effect by using a semi-empirical expression of source/drain access region resistances. Comparisons with numerical and measured data show that the proposed model gives an accurate description of Ef and drain current in all regions of operation.
Publication Date
1-1-2016
Publication Title
Solid-State Electronics
Volume
115
Number of Pages
54-59
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.sse.2015.10.005
Copyright Status
Unknown
Socpus ID
84946592827 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84946592827
STARS Citation
Deng, Wanling; Huang, Junkai; Ma, Xiaoyu; Liou, Juin J.; and Yu, Fei, "A Compact Drain Current Model For Heterostructure Hemts Including 2Deg Density Solution With Two Subbands" (2016). Scopus Export 2015-2019. 3379.
https://stars.library.ucf.edu/scopus2015/3379