High-Performance And Linear Thin-Film Lithium Niobate Mach Zehnder Modulators On Silicon Up To 50 Ghz

Abstract

Compact electro-optical modulators are demonstrated on thin films of lithium niobate on silicon operating up to 50 GHz. The half-wave voltage length product of the high-performance devices is 3.1 V.cm at DC and less than 6.5 V.cm up to 50 GHz. The 3 dB electrical bandwidth is 33 GHz, with an 18 dB extinction ratio. The third-order intermodulation distortion spurious free dynamic range is 97.3 dBHz2/3 at 1 GHz and 92.6 dBHz2/3 at 10 GHz. The performance demonstrated by the thin-film modulators is on par with conventional lithium niobate modulators but with lower drive voltages, smaller device footprints, and potential compatibility for integration with large-scale silicon photonics.

Publication Date

12-15-2016

Publication Title

Optics Letters

Volume

41

Issue

24

Number of Pages

5700-5703

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OL.41.005700

Socpus ID

85009354306 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85009354306

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