Lithium Niobate Modulators On Silicon Beyond 20 Ghz
Abstract
Compact lithium niobate electrooptic Mach-Zehnder modulators on silicon with 18 dB extinction ratio and record-low 3.1 V.cm half-wave voltage-length product are characterized up to 20 GHz, rendering them suitable for high-speed datacom applications.
Publication Date
6-1-2016
Publication Title
5th IEEE Photonics Society Optical Interconnects Conference, OI 2016
Number of Pages
108-109
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/OIC.2016.7483021
Copyright Status
Unknown
Socpus ID
84978496433 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84978496433
STARS Citation
Rao, Ashutosh; Patil, Aniket; Rabiei, Payam; Desalvo, Richard; and Paolella, Arthur, "Lithium Niobate Modulators On Silicon Beyond 20 Ghz" (2016). Scopus Export 2015-2019. 4200.
https://stars.library.ucf.edu/scopus2015/4200