Compelling Experimental Evidence Of A Dirac Cone In The Electronic Structure Of A 2D Silicon Layer

Abstract

The remarkable properties of graphene stem from its two-dimensional (2D) structure, with a linear dispersion of the electronic states at the corners of the Brillouin zone (BZ) forming a Dirac cone. Since then, other 2D materials have been suggested based on boron, silicon, germanium, phosphorus, tin, and metal di-chalcogenides. Here, we present an experimental investigation of a single silicon layer on Au(111) using low energy electron diffraction (LEED), high resolution angle-resolved photoemission spectroscopy (HR-ARPES), and scanning tunneling microscopy (STM). The HR-ARPES data show compelling evidence that the silicon based 2D overlayer is responsible for the observed linear dispersed feature in the valence band, with a Fermi velocity of comparable to that of graphene. The STM images show extended and homogeneous domains, offering a viable route to the fabrication of silicene-based opto-electronic devices.

Publication Date

3-10-2017

Publication Title

Scientific Reports

Volume

7

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1038/srep44400

Socpus ID

85014882038 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85014882038

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