Esd Protection Structure With Reduced Capacitance And Overshoot Voltage For High Speed Interface Applications

Keywords

Electrostatic discharge; High speed data converter interface; Linear capacitance

Abstract

Dual diodes with embedded silicon controlled rectifier (DD-SCR) for high-speed applications are presented. A new DD-SCR topography is shown to exhibit a high failure current (It2), small on-state resistance (RON), low voltage overshoot and low parasitic capacitance. This is a preferred device option for broadband high-speed data converter applications in advanced 28 nm CMOS processes. A comprehensive device characterization demonstrates the design tradeoffs and the superior ESD performance in relation to the devices' variations capacitance in the sub 40 fF range.

Publication Date

12-1-2017

Publication Title

Microelectronics Reliability

Volume

79

Number of Pages

201-205

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2017.03.014

Socpus ID

85015761793 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85015761793

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