Title
Esd Protection Structure With Reduced Capacitance And Overshoot Voltage For High Speed Interface Applications
Keywords
Electrostatic discharge; High speed data converter interface; Linear capacitance
Abstract
Dual diodes with embedded silicon controlled rectifier (DD-SCR) for high-speed applications are presented. A new DD-SCR topography is shown to exhibit a high failure current (It2), small on-state resistance (RON), low voltage overshoot and low parasitic capacitance. This is a preferred device option for broadband high-speed data converter applications in advanced 28 nm CMOS processes. A comprehensive device characterization demonstrates the design tradeoffs and the superior ESD performance in relation to the devices' variations capacitance in the sub 40 fF range.
Publication Date
12-1-2017
Publication Title
Microelectronics Reliability
Volume
79
Number of Pages
201-205
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.microrel.2017.03.014
Copyright Status
Unknown
Socpus ID
85015761793 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85015761793
STARS Citation
Dong, Aihua; Salcedo, Javier A.; Parthasarathy, Srivatsan; Zhou, Yuanzhong; and Luo, Sirui, "Esd Protection Structure With Reduced Capacitance And Overshoot Voltage For High Speed Interface Applications" (2017). Scopus Export 2015-2019. 5469.
https://stars.library.ucf.edu/scopus2015/5469