Title
Heterogeneous Stacking Silicon Controlled Rectifier Design With Improved Esd Performance
Abstract
A novel design consisting of a heterogeneous stacking of silicon control rectifier is proposed in this paper. A latch-up free design in a high voltage BCDMOS process is demonstrated. Structures based on this method are compared with conventionally stacked SCR structure. Comprehensive characterization, including DC and transmission line pulsing (TLP), is undertaken to demonstrate the performance.
Publication Date
10-5-2017
Publication Title
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume
2017-July
Number of Pages
1-3
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IPFA.2017.8060176
Copyright Status
Unknown
Socpus ID
85045051624 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85045051624
STARS Citation
Dong, Aihua; He, Linfeng; Liang, Wei; Salcedo, Javier A.; and Hajjar, Jean Jacques, "Heterogeneous Stacking Silicon Controlled Rectifier Design With Improved Esd Performance" (2017). Scopus Export 2015-2019. 6588.
https://stars.library.ucf.edu/scopus2015/6588