Energy-Efficient Nonvolatile Reconfigurable Logic Using Spin Hall Effect-Based Lookup Tables

Keywords

Fracturable LUT; magnetic tunnel junction; reconfigurable fabric; spin Hall effect; spin transfer torque; spin-based memory cell

Abstract

In this paper, we leverage magnetic tunnel junction (MTJ) devices to design an energy-efficient nonvolatile lookup table (LUT), which utilizes a spin Hall effect (SHE) assisted switching approach for MTJ storage cells. SHE-MTJ characteristics are modeled in Verilog-A based on precise physical equations. Functionality of the proposed SHE-MTJ-based LUT is validated using SPICE simulation. Our proposed SHE - MTJ-based LUT (SHE-LUT) is compared with the most energy-efficient MTJ-based LUT circuits. The obtained results show more than 6%, 37%, and 67% improvement over three previous MTJ-based designs in term of read energy consumption. Moreover, the reconfiguration delay and energy of the proposed design is compared with that of the MTJ-based LUTs which utilize the spin transfer torque (STT) switching approach for reconfiguration. The results exhibit that SHE-LUT can operate at 78% higher clock frequency while achieving at least 21% improvement in terms of reconfiguration energy consumption. The operation-specific clocking mechanisms for managing the SHE-LUT operations are introduced along with detailed analyses concerning tradeoffs. Results are extended to design a 6-input fracturable LUT using SHE-MTJs.

Publication Date

1-1-2017

Publication Title

IEEE Transactions on Nanotechnology

Volume

16

Issue

1

Number of Pages

32-43

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TNANO.2016.2625749

Socpus ID

85014418453 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85014418453

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