Loss Reduction Of Silicon-On-Insulator Waveguides For Deep Mid-Infrared Applications

Abstract

We report that propagation loss of optical waveguides based on a silicon-on-insulator (SOI) material platform can be greatly reduced. Our simulations show that the loss, including SiO2 absorption and substrate leakage, but no scattering loss, is 0.024 and 0.53 dB/cm in the deep mid-infrared at 4.8 and 7.1 μm wavelengths, where the material absorption in SiO2 is 100 and 1000 dB/cm, respectively. The loss becomes negligible, compared to scattering loss in Si waveguides. This is enabled by using the TE10 mode in a pedestal waveguide. We also show that the TE10 mode can be excited in the proposed waveguide by the fundamental mode with a coupling efficiency of >94%. Low propagation loss, high coupling efficiency, and fabrication-friendly design would make it promising for practical use of SOI devices in the deep mid-infrared.

Publication Date

9-1-2017

Publication Title

Optics Letters

Volume

42

Issue

17

Number of Pages

3454-3457

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OL.42.003454

Socpus ID

85028626130 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85028626130

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