Fast Growth Rate Of Epitaxial Β–Ga2O3 By Close Coupled Showerhead Mocvd

Keywords

A1: Growth rate; A1: UV/Visible transmission; A1: X-ray diffraction; A3: Metal organic chemical vapor deposition; B2: β–Ga O thin films 2 3

Abstract

We report on the growth of epitaxial β–Ga2O3 thin films on c-plane sapphire substrates using a close coupled showerhead MOCVD reactor. Ga(DPM)3 (DPM = dipivaloylmethanate), triethylgallium (TEGa) and trimethylgallium (TMGa) metal organic (MO) precursors were used as Ga sources and molecular oxygen was used for oxidation. Films grown from each of the Ga sources had high growth rates, with up to 10 μm/hr achieved using a TMGa precursor at a substrate temperature of 900 °C. As confirmed by X-ray diffraction, the films grown from each of the Ga sources were the monoclinic (2¯ 0 1) oriented β–Ga2O3 phase. The optical bandgap of the films was also estimated to be ∼4.9 eV. The fast growth rate of β–Ga2O3 thin films obtained using various Ga-precursors has been achieved due to the close couple showerhead design of the MOCVD reactor as well as the separate injection of oxygen and MO precursors, preventing the premature oxidation of the MO sources. These results suggest a pathway to overcoming the long-standing challenge of realizing fast growth rates for Ga2O3 using the MOCVD method.

Publication Date

10-1-2017

Publication Title

Journal of Crystal Growth

Volume

475

Number of Pages

77-82

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.jcrysgro.2017.06.001

Socpus ID

85020394401 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85020394401

This document is currently not available here.

Share

COinS